1 p-channel 30-v (d-s) mosfet feature s ? halogen-free ? t renchfet ? p o wer mosfet ?100 % r g te s t e d ?100 % uis tested applications ? l oad switch ? notebook adaptor switch notes: a. s urface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady state conditions is 85 c/w. d. based on t c = 25 c . p r oduct summary v ds (v) r ds(on) ( ) i d (a ) d q g (t yp.) - 30 0 .0092 at v gs = - 10 v - 13.5 29.5 nc 0.0128 at v gs = - 4 .5 v - 11.6 absolute maximum ratings t a = 2 5 c, unless otherwise noted p a rameter symbol limit unit d rain-source voltage v ds - 30 v gate-source v o ltage v gs 25 c ontin uous drain current (t j = 150 c ) t c = 25 c i d - 13 .5 a t c = 70 c - 11 .9 t a = 25 c - 1 0.9 a, b t a = 70 c - 8.6 a, b pulsed dr ain current i dm - 60 c ontin uous source-drain diode current t c = 25 c i s - 4. 1 t a = 25 c - 2.2 a, b a v alanche current l = 0.1 mh i as - 20 single-pulse a valanche energy e as 20 mj m aximum power dissipation t c = 25 c p d 5.0 w t c = 70 c 3.2 t a = 25 c 2.7 a, b t a = 70 c 1.7 a, b oper a ting junction and storage temperature range t j , t stg - 55 to 150 c t h ermal resistance ratings p aram eter symb ol typical maximum un it m aximum junction-to-ambient a, c t 10 s r thj a 38 4 6 c/w maximum junction-to-foot steady state r th jf 20 2 5 s g d p-channel mosfet s s d d d s g d so-8 5 6 7 8 t op v iew 2 3 4 1 ordering information: si4825ddy-t1-ge3 (lead (pb)-free and halogen-free) rohs compliant www.din-tek.jp dt m44 1 5
2 no t es: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecif ications t j = 25 c, unless otherwise noted pa rame ter symb ol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 250 a - 30 v v ds t emper ature coefficient ' v ds /t j i d = - 250 a - 34 mv/ c v gs( t h) t emperature co efficient ' v gs(t h) /t j 5.3 gate-so urce threshold voltage v gs( t h) v ds = v gs , i d = - 250 a - 1.4 - 2.5 v gate-source leakage i gss v ds = 0 v , v gs = 25 v 100 na z ero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v , t j = 55 c - 5 on-state dr ain current a i d( on ) v ds t - 10 v , v gs = - 10 v - 30 a drain-source on-state resistance a r ds( o n) v gs = - 10 v , i d = - 10 a 0.007 0.009 2 : v gs = - 4.5 v , i d = - 8 a 0 .0115 0.0128 forward transconductance a g fs v ds = - 10 v , i d = - 10 a 28 s dy nam ic b inpu t capacita nce c iss v ds = - 15 v , v gs = 0 v , f = 1 mhz 2550 pf output capacitance c oss 455 re v erse transfer capacitance c rss 390 t o tal gate charge q g v ds = - 15 v , v gs = - 10 v , i d = - 10 a 57 86 nc v ds = - 15 v , v gs = - 4.5 v , i d = - 10 a 29.5 45 gate-source charge q gs 8 gate- dr ain charge q gd 22 g a te resistance r g f = 1 mhz 0.5 2.2 4.4 : tu r n - o n d e l ay t i m e t d(o n ) v dd = - 15 v, r l = 1.5 : i d # - 10 a, v gen = - 10 v , r g = 1 : 13 25 ns rise time t r 12 24 t urn-off delaytime t d(o f f) 40 70 fa ll time t f 91 8 tu r n - o n d e l ay t i m e t d(on ) v dd = - 15 v, r l = 1.5 : i d # - 10 a, v gen = - 4.5 v , r g = 1 : 48 80 rise time t r 92 160 t urn-off delaytime t d(o f f) 34 60 fa ll time t f 19 35 drain - source body diode characteristics continous source-drain diode current i s t c = 2 5 c - 4.1 a pulse diode forward current i sm - 60 body diode v o ltage v sd i s = - 3 a, v gs = 0 v - 0.75 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 27 45 ns body diode reverse recovery charge q rr 16 27 nc reverse recovery fall time t a 12 ns rev erse recovery rise time t b 15 z z z g l q w h n m s ' 7 0
3 typica l c haracteristics 25 c, unless otherwise noted ou tpu t characteristics on-resistance vs. drain current gate charge 0 12 24 36 4 8 60 0.0 0 .5 1.0 1.5 2.0 2.5 v ds - drain - to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =1 0t hr u 4 v v gs =3 v v gs =1 v , 2 v 0.005 0.010 0.015 0.020 0.025 0.030 0 1 02030405060 - on - resistance ( ) r ds( on) i d - drain c u rrent (a) v gs =1 0 v v gs =4. 5 v 0 2 4 6 8 10 0 1 224364 8 60 i d =1 0a - gate- to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs ds =1 0 v v ds =1 5 v v v ds = 20 v transfer ch aracteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 v gs - gate - to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 125 c t c = 25 c t c = - 55 c c rss 0 8 00 1600 2400 3200 4000 0 5 10 15 20 25 c is s v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction t emperat u re (c) ( n ormalized) - on-resistance r ds(on) i d = - 10 a v gs = - 10 v v gs = - 4.5 v www.din-tek.jp dt m44 1 5
4 ty pi cal characteristics 25 c, unless otherwise noted sou r ce-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd - so u rce - to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c - 0.4 - 0.2 0.0 0.2 0.4 0.6 0. 8 - 50 - 25 0 25 50 75 100 125 150 v ariance ( v ) v gs( th) t j - temperat u re (c) i d =2 5 0 a i d =5 m a on-resistance vs. gate-to-so urce voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 0.10 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate - to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =1 0 a 0 34 6 8 102 136 170 01 1 100. 00 . 0 1 ti m e (s) po w er ( w ) 0.1 saf e operating area 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified 0.1 1 10 10 t a = 25 c single p u lse b v dss limited b yr ds(on) * dc 10 s 100 ms 10 ms 1m s 1 s www.din-tek.jp dt m44 1 5
5 mosfe t typical characteristics 25 c, unless otherwise noted * t he po wer dissipation p d is based on t j( ma x) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dis s ipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. cur rent derating* 0.0 3.4 6. 8 10.2 13.6 17.0 0 25 50 75 100 125 150 t c - case t emperat u re (c) i d - drain c u rrent (a) pow e r, junction-to-foot t c - case t emperat u re (c) 0.0 1.2 2.4 3.6 4. 8 6.0 0 25 50 75 100 125 150 po w er ( w ) po we r derating, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m44 1 5
6 ty pi cal characteristics 25 c, unless otherwise noted no rmalized t hermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm -- t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty c ycle = 0.5 0.02 no rmalized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse 0.02 0.05 www.din-tek.jp dt m44 1 5
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
|
